Energy storage properties of antiferroelectric films

Are antiferroelectric films suitable for dielectric capacitors?

Antiferroelectric materials represented by PbZrO 3 (PZO) have excellent energy storage performance and are expected to be candidates for dielectric capacitors. It remains a challenge to further enhance the effective energy storage density and efficiency of PZO-based antiferroelectric films through domain engineering.

Can antiferroelectric materials be used as energy storage capacitors?

In recent years, antiferroelectric materials have been attracting considerable attention as energy storage capacitors due to their potential applications in pulsed power systems. In this work, antiferroelectric Pb 0.88 Ca 0.12 ZrO 3 (PCZ) thin films were prepared via chemical solution deposition and annealed using rapid thermal annealing.

How can antiferroelectric and relaxor properties improve energy storage performance?

This shows that the combination of antiferroelectric properties and relaxor properties is an effective way to improve the energy storage performance. And it is easier to obtain a higher energy storage density by forming a composite film than by replacing elements. Fig. 5.

What is a relaxor antiferroelectric film?

This film shows obvious relaxor antiferroelectric behavior under about 1000 kV/cm. The combination of antiferroelectric properties and relaxor properties enables this film to obtain high energy storage density of 66.7 J/cm 3, which is higher than that of BBT films and all PZ-based films as much as we can found.

What is a high energy storage density film?

The combination of antiferroelectric properties and relaxor properties enables this film to obtain high energy storage density of 66.7 J/cm 3, which is higher than that of BBT films and all PZ-based films as much as we can found. The variation of both Wrec and η were less than 4% after 5 × 10 7 cycles.

What factors affect the energy storage performance of PZO-based antiferroelectric materials?

In this work, the effects of three variables, misfit strain between the thin film and substrate, defect dipoles doping, and film thickness, on the domain structure and energy storage performance of PZO-based antiferroelectric materials are comprehensively investigated via phase-field simulations.